IPB120N10S405ATMA1 vs IPB90N06S4L04ATMA2 比較
詳細並排比較 IPB120N10S405ATMA1 由 Infineon 與 IPB90N06S4L04ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB120N10S405ATMA1 | IPB90N06S4L04ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | Enhancement Mode (Trench) | OptiMOS T2, N-channel enhancement mode |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Power Dissipation (PD) at Tc | 190 W | — |
| On-Resistance R_DS(on) (typ) | 5 mΩ at VGS=10 V | — |
| 封裝 | PG-TO263-3 (D2PAK) Surface Mount | PG-TO263-3-2 (D2PAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +175 C | -55 °C to +175 °C |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at ≤30 C / 85% RH) | — |
| Peak Reflow Temperature | 260 C | 260 °C |
| Avalanche Tested | 100% (production-screened) | 100% avalanche-tested |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Gate Threshold Voltage (typ) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr - body diode] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB90N06S4L04ATMA2 |
| Drain-Source Voltage (V_DSS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 90 A |
| Pulsed Drain Current (I_D,pulse) | — | 360 A |
| Power Dissipation (P_D, Tc) | — | 150 W |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | — | 3.4 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th)] |
| Gate-Source Voltage (V_GS) | — | ±20 V |
| MSL 等級 | — | MSL1 (unlimited floor life) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| RoHS / Halogen-Free | — | Yes (Green Product) |