IPD068N10N3GATMA1 vs BSF134N10NJ3GXUMA1 比較
詳細並排比較 IPD068N10N3GATMA1 由 Infineon 與 BSF134N10NJ3GXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD068N10N3GATMA1 | BSF134N10NJ3GXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD068N10N3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel, Enhancement Mode) | Trench-gate OptiMOS planar |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| On-Resistance RDS(on) max | 6.8 mOhm | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V (typical) | — |
| 封裝 | PG-TO252-3 (DPAK, 2 leads + tab) | MG-WDSON-2 (CanPAK M) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作接面溫度 | -55 C to +175 C | — |
| Channel Type | N-Channel | — |
| Configuration | Single | Single with built-in diode |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | [DATA_NEEDED: MSL rating] |
| Packing | Tape & Reel (T/R) | — |
| Qualification | Industrial (non-automotive) | — |
| Series | — | OptiMOS 100 V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 9 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| Power Dissipation (PD) at TA=25°C | — | 2.2 W |
| Power Dissipation (PD) at TC=25°C | — | 43 W |
| Terminal Position | — | Bottom |
| Terminal Finish | — | Silver Nickel |
| 工作溫度範圍 | — | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max value] |
| Body Diode Reverse Recovery | — | [DATA_NEEDED: trr value] |