IPD60R385CPATMA1 vs IPD60R280P7SAUMA1 比較
詳細並排比較 IPD60R385CPATMA1 由 Infineon 與 IPD60R280P7SAUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD60R385CPATMA1 | IPD60R280P7SAUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS™ CP (5th generation) | CoolMOS P7 (7th generation, 600 V) |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 600 V | — |
| Drain-Source On-Resistance (RDS(on)) | 385 mΩ (typ, VGS = 10 V) | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Pulsed Drain Current (IDM) | 27 A | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC=25°C | 83 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | 4 V max @ ID = 190 µA |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| 工作接面溫度 | -55 °C to +150 °C | — |
| 封裝 / 外殼 | PG-TO252-3 (DPAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (Gate, Drain, Source; tab = Drain) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc) | — | 12 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 280 mΩ (typical) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Power Dissipation (Ptot, Tc) | — | 53 W |
| Operating Junction Temperature (TJ) | — | -40 °C to +150 °C |
| Technology | — | CoolMOS P7 Superjunction (SJ) N-channel |
| 封裝 | — | PG-TO252-3 (DPAK) |
| Integrated ESD Protection | — | Yes |