IPT015N10NF2SATMA1 vs ISC028N03LF2SATMA1 比較
詳細並排比較 IPT015N10NF2SATMA1 由 Infineon 與 ISC028N03LF2SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPT015N10NF2SATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| 工作溫度範圍 | -55 °C to +175 °C | — |
| 封裝 | PG-HSOF-8-10 (9-pin, 8+tab) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | — |
| Gate Drive Voltage (typ) | 10 V | — |
| 單脈衝突崩能量 | [DATA_NEEDED: EAS value] | — |
| RoHS 狀態 | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 30V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 128 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.35 V |
| Power Dissipation at TA | — | 3 W |
| Power Dissipation at TC | — | 83 W |
| 工作接面溫度 | — | -55 C to +175 C |
| RoHS / Lead-Free | — | Yes (RoHS compliant) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |