IPT067N20NM6ATMA1 vs ISC058N04NM5ATMA1 比較
詳細並排比較 IPT067N20NM6ATMA1 由 Infineon 與 ISC058N04NM5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPT067N20NM6ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 5 40V Normal Level |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Continuous Drain Current (ID) at TC=25C | 137 A | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | PG-HSOF-8-1 (8-pin + exposed tab) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| 工作溫度範圍 | -55C to +150C (junction) | -55C to +175C |
| Technology | Trench-gate OptiMOS 6 silicon | OptiMOS 5 trench MOSFET |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | — |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 等級 | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Configuration | Single N-channel | — |
| Continuous Drain Current (ID, Tc=25C) | — | 63 A |
| Continuous Drain Current (ID, Ta=25C) | — | 17 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | — | 5.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.4 V |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 42 W |
| RoHS Compliance | — | RoHS Compliant |
| MSL (Moisture Sensitivity Level) | — | MSL per JEDEC J-STD-020 |
| Gate Drive Level | — | Normal Level (10V VGS recommended) |