IQDH35N03LM5SCATMA1 vs IQD016N08NM5ATMA1 比較
詳細並排比較 IQDH35N03LM5SCATMA1 由 Infineon 與 IQD016N08NM5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQDH35N03LM5SCATMA1 | IQD016N08NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench, shielded-gate) | OptiMOS 5 Power-MOSFET |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| 封裝 | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-TSON-8-9 (PQFN 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +175 C | -55C to +150C (junction, standard MOSFET rating) |
| MSL 等級 | 1 (unlimited) | — |
| RoHS 狀態 | Compliant | Compliant |
| Marking | IQDH35N03LM5S | — |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (Ta) | — | 31 A |
| Continuous Drain Current (Tc) | — | 323 A |
| On-Resistance RDS(on) typical | — | 1.6 mΩ |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typical] |