IQE018N06NM6CGATMA1 vs IQE022N06LM5CGATMA1 比較
詳細並排比較 IQE018N06NM6CGATMA1 由 Infineon 與 IQE022N06LM5CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
IQE022N06LM5CGATMA1 ✓ 啟用中規格比較
| 參數 | IQE018N06NM6CGATMA1 | IQE022N06LM5CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 60 V | 60 V |
| Continuous Drain Current (I_D, Tc) | 178 A | — |
| Continuous Drain Current (I_D, Ta) | 25 A | — |
| R_DS(on) max (V_GS=10 V) | 1.8 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | [DATA_NEEDED: V_GS(th) value] |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 125 W | — |
| 封裝 | PG-TTFN-9-3 (TOLL/TTFN) | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +175C (junction) | -55C to +150C |
| Technology | Trench MOSFET, OptiMOS 6 | N-Channel Power MOSFET (Enhancement Mode) |
| RoHS Compliance | Compliant | — |
| Part Family | — | OptiMOS 5 |
| Continuous Drain Current (I_D) at T_A=25C | — | 24 A |
| Continuous Drain Current (I_D) at T_C=25C | — | 151 A |
| R_DS(on) (typical, V_GS=10V) | — | 2.2 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G value] |
| Power Dissipation (T_A) | — | 2.5 W |
| Power Dissipation (T_C) | — | 100 W |
| 腳位數 | — | 9 (with exposed thermal pad) |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |