IQE031N08LM6CGSCATMA1 vs IQDH88N06LM5CGSCATMA1 比較
詳細並排比較 IQE031N08LM6CGSCATMA1 由 Infineon 與 IQDH88N06LM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ 啟用中規格比較
| 參數 | IQE031N08LM6CGSCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 (40 V to 100 V) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | — |
| Continuous Drain Current (ID) at Tc | 127 A | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance RDS(on) max | [DATA_NEEDED: RDS(on) at VGS=10 V] | — |
| Gate Drive Level | Logic-level | — |
| 封裝 | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PG-WHTFN-9-U02 (PQFN 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +175 C (junction, typical for OptiMOS 6) | -55°C to +175°C (TJ) |
| Avalanche Tested | 100% avalanche tested | — |
| MSL 等級 | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Technology | — | OptiMOS 5 (trench) |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| 連續汲極電流 (TC=25°C) | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| 功率耗散 (TC=25°C) | — | 333 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| 腳位數 | — | 9 (with exposed pad) |
| Cooling | — | Dual-side cooling capable |
| Polarity | — | N-Channel |
| Configuration | — | Single |