IR2101STRPBF vs IR2109STRPBF 比較

詳細並排比較 IR2101STRPBF 由 Infineon 與 IR2109STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IR2109STRPBF IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR2109STRPBF ✓ 啟用中

規格比較

參數 IR2101STRPBF IR2109STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration Half-Bridge (High-Side and Low-Side), Independent Half-Bridge (High-Side + Low-Side)
Number of Drivers 2 —
Driver Type Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL —
Bootstrap Diode Integrated Integrated
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
封裝 8-SOIC (0.154 inch, 3.90 mm Width) 8-SOIC (3.90 mm Width)
安裝類型 Surface Mount Surface Mount
工作溫度 -40 C to +125 C -40 C to +125 C
MSL 等級 MSL 3 —
RoHS 狀態 Compliant Compliant
Product Type — Half-Bridge Gate Driver IC
輸出數量 — 2 (High-Side / Low-Side)
High-Side Offset Voltage (Max) — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Peak Source Output Current — 0.2 A (typ)
Peak Sink Output Current — 0.35 A (typ)
Propagation Delay (typ) — 750 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
ton / toff (typ) — 540 ns
Input Logic — Non-Inverting
UVLO — Yes (VCC and VBS)
Dead Time Control — Built-in
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes

資料表與資源

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