IR2109STRPBF vs IR2101STRPBF 比較

詳細並排比較 IR2109STRPBF 由 Infineon 與 IR2101STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IR2109STRPBF IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR2109STRPBF ✓ 啟用中

規格比較

參數 IR2109STRPBF IR2101STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC —
Configuration Half-Bridge (High-Side + Low-Side) Half-Bridge (High-Side and Low-Side), Independent
輸出數量 2 (High-Side / Low-Side) —
High-Side Offset Voltage (Max) 600 V —
Supply Voltage (VCC) 10 V to 20 V —
Peak Source Output Current 0.2 A (typ) —
Peak Sink Output Current 0.35 A (typ) —
Propagation Delay (typ) 750 ns —
Rise/Fall Time (typ) [DATA_NEEDED: rise/fall time] —
ton / toff (typ) 540 ns —
Input Logic Non-Inverting —
UVLO Yes (VCC and VBS) —
Bootstrap Diode Integrated Integrated
Dead Time Control Built-in —
dV/dt Immunity Yes —
Negative VS Transient Tolerance Yes —
封裝 8-SOIC (3.90 mm Width) 8-SOIC (0.154 inch, 3.90 mm Width)
安裝類型 Surface Mount Surface Mount
工作溫度 -40 C to +125 C -40 C to +125 C
RoHS 狀態 Compliant Compliant
Number of Drivers — 2
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Logic Input Compatibility — 3.3 V / 5 V / 15 V CMOS/LSTTL
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
MSL 等級 — MSL 3

資料表與資源

瀏覽所有產品 建立 BOM 索取報價