IR21271STRPBF vs IRS2005STRPBF 比較

詳細並排比較 IR21271STRPBF 由 Infineon 與 IRS2005STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2005STRPBF IRS2005STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2005STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2005STRPBF ✓ 啟用中

規格比較

參數 IR21271STRPBF IRS2005STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration High-Side or Low-Side —
輸出數量 1 2
Input Polarity Non-Inverting —
Supply Voltage (VCC) 9 V to 20 V [DATA_NEEDED: VCC range min/max]
High-Side Offset Voltage 600 V max —
Peak Source Current 250 mA —
Peak Sink Current 500 mA —
Propagation Delay 200 ns typical —
上升時間 [DATA_NEEDED: rise time] —
下降時間 [DATA_NEEDED: fall time] —
工作溫度 -40C to +125C —
封裝 8-SOIC (3.90 mm) —
安裝類型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (Pb-Free, suffix PBF) —
Integrated Current Sense Yes (CS pin + shutdown) —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes (high-side rail) —
功能 — Half-Bridge Gate Driver
Driven Configuration — High-Side and Low-Side (Half-Bridge)
Channel Type — Independent
Logic Type — Non-Inverting
Maximum Offset Voltage (High-Side) — 200 V
Peak Source Current (typ.) — 0.29 A
Peak Sink Current (typ.) — 0.6 A
Undervoltage Lockout — VCC and VBS UVLO integrated
Input Compatibility — 3.3 V / 5 V logic-level inputs
封裝 / 外殼 — 8-SOIC (0.154", 3.90 mm width)
工作溫度範圍 — -40 °C to +125 °C
Packaging — Tape & Reel (TR)
Product Status — Active
RoHS 狀態 — Compliant (PBF suffix indicates Pb-free)

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