IRF4905LPBF vs IRF4905STRLPBF 比較

詳細並排比較 IRF4905LPBF 由 Infineon 與 IRF4905STRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF4905LPBF IRF4905STRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) @ Tc=25C -74 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] —
Gate-Source Voltage (Vgs) max ±20 V —
Total Power Dissipation (Ptot) @ Tc=25C 200 W —
工作接面溫度 -55C to +150C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Rise Time (tr) typ [DATA_NEEDED: rise time] —
Fall Time (tf) typ [DATA_NEEDED: fall time] —
封裝 TO-262 (I2PAK), through-hole, 3-pin D2PAK (TO-263)
Technology HEXFET (IR MOSFET) HEXFET (Planar)
安裝類型 Through Hole Surface Mount
Lead-Free / RoHS Yes (PbF suffix) —
Avalanche Rated Yes —
FET Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -74 A
Pulsed Drain Current (IDM) — -260 A
Gate-Source Voltage (VGS) max — ±20 V
On-Resistance RDS(on) at VGS=-10V — 20 mOhm
Total Gate Charge (Qg) — 120 nC
Power Dissipation (PD) at Tc=25C — 170 W
工作溫度範圍 — -55C to +175C
MSL 等級 — 1
RoHS 狀態 — Compliant
Lead-Free — Yes

資料表與資源

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