IRF7306TRPBF vs IRFL4315TRPBF 比較

詳細並排比較 IRF7306TRPBF 由 Infineon 與 IRFL4315TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFL4315TRPBF IRFL4315TRPBF - 150V N-Ch MOSFET, 2.6A, 185mΩ | Infineon

IRFL4315TRPBF - 150V N-Ch MOSFET, 2.6A, 185mΩ | Infineon

IRFL4315TRPBF ✓ 啟用中

規格比較

參數 IRF7306TRPBF IRFL4315TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel (dual) —
Number of Channels 2 (independent, in single package) —
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -3.6 A at 25°C —
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Maximum Power Dissipation 2 W at TA = 25°C —
Technology HEXFET Power MOSFET (Generation V) IR MOSFET™ (planar/HEXFET-style)
工作溫度範圍 -55°C to +150°C (junction) [DATA_NEEDED: T_J min/max]
封裝 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) SOT-223
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel (TR) Tape & Reel (TRPBF)
MSL 等級 1 (per JEDEC J-STD-020) —
RoHS Compliance Yes (PBF suffix indicates Pb-free) —
Qualification Consumer market qualification standards (per IR/Infineon datasheet) —
Avalanche Rated Yes (ruggedized device per datasheet) —
FET Type — N-Channel MOSFET
Drain-to-Source Voltage (V_DS) — 150 V
Continuous Drain Current (I_D) at 25°C — 2.6 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: I_DM rating]
R_DS(on) max at V_GS=10V — 185 mΩ
Gate Threshold Voltage V_GS(th) — [DATA_NEEDED: V_GS(th) typ/min/max]
Total Gate Charge Q_G — 12 nC
Gate-to-Source Voltage V_GS — ±30 V (max)
Continuous Source Current (Body Diode I_S) — 1.6 A
di/dt (Body Diode) — 230 A/μs
Power Dissipation (Ta) — 2.8 W
Qualification Standard — Industrial market (per Infineon datasheet)
Lead-Free / RoHS — Lead-free (PBF suffix); RoHS compliant

資料表與資源

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