IRF7313TRPBF vs IRF7342TRPBF 比較

詳細並排比較 IRF7313TRPBF 由 Infineon 與 IRF7342TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF7313TRPBF IRF7342TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF7313TRPBF IRF7342TRPBF
Technology IR MOSFET Generation V (HEXFET Fifth Generation) HEXFET Power MOSFET (Fifth Generation), P-Channel
Transistor Configuration Dual N-Channel (Independent) —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max 6.5 A per channel —
On-Resistance (RDS(on)) max 29 mOhm at VGS=10V —
Power Dissipation (PD) max 2 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (typical range) —
工作溫度範圍 -55C to +150C (junction) -55 C to +150 C (Tj)
封裝 8-pin SOIC (SO-8) surface mount 8-SOIC (SO-8), surface mount
安裝類型 Surface Mount Surface Mount
Lead-Free / Pbf Yes (lead-free plating) —
Avalanche Rated Yes —
MSL 等級 1 —
Qualification Standard Consumer market (per IR datasheet) —
Shipping Media Tape & Reel (TRPBF suffix) —
Configuration — Dual P-Channel MOSFET Array (two independent P-FETs in one package)
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) — -3.4 A at 25 C
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (Vgs(th)) — -1.0 V to -3.0 V (typ -1.7 V)
Drain-Source On-Resistance (RDS(on)) — 0.105 ohm max at VGS = -10 V
Maximum Power Dissumption (Pd) — 2 W
Packaging — Tape and Reel (TR)
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free, RoHS compliant)
Channel Type — P-Channel (enhancement mode)
Number of Channels — 2 (dual array)

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