IRF8736TRPBF vs BSC054N04NSGATMA1 比較

詳細並排比較 IRF8736TRPBF 由 Infineon 與 BSC054N04NSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC054N04NSGATMA1 BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon

BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon

BSC054N04NSGATMA1 ✓ 啟用中

規格比較

參數 IRF8736TRPBF BSC054N04NSGATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology StrongIRFET / HEXFET OptiMOS 3 (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25C 18 A —
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
封裝 SO-8 (8-SO, MS-012AA) PG-TDSON-8-5 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction) -55C to +150C
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
MSL 等級 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Avalanche Rated Yes (fully characterized avalanche voltage) —
Configuration Single —
Packaging Tape & Reel (TRPBF suffix) —
Manufacturer — Infineon Technologies
Part Number — BSC054N04NSGATMA1
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tc=25C — 81 A
Continuous Drain Current (ID) at Ta=25C — 17 A
On-Resistance RDS(on) max at VGS=10V — 5.4 mOhm
Gate-Source Voltage (VGS) max — ±20 V
Power Dissipation at Tc=25C — 57 W
Power Dissipation at Ta=25C — 2.5 W
RoHS 狀態 — Compliant
Gate Drive Voltage (recommended) — 10 V
Lead-Free Reflow — Yes

資料表與資源

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