IRF8736TRPBF vs IRLML0040TRPBF 比較

詳細並排比較 IRF8736TRPBF 由 Infineon 與 IRLML0040TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLML0040TRPBF IRLML0040TRPBF - 40V N-Ch MOSFET, 56mOhm, 3.6A | Infineon

IRLML0040TRPBF - 40V N-Ch MOSFET, 56mOhm, 3.6A | Infineon

IRLML0040TRPBF ✓ 啟用中

規格比較

參數 IRF8736TRPBF IRLML0040TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Technology StrongIRFET / HEXFET IR MOSFET / HEXFET
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25C 18 A 3.6 A
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
封裝 SO-8 (8-SO, MS-012AA) Micro3 (SOT-23)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction) —
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
MSL 等級 1 (per JEDEC J-STD-020) —
Avalanche Rated Yes (fully characterized avalanche voltage) —
Configuration Single —
Packaging Tape & Reel (TRPBF suffix) —
Drain-to-Source Voltage (VDS) — 40 V
Pulsed Drain Current (IDM) — 14 A
RDS(on) Max at VGS=10V — 56 mOhm
Gate-to-Source Voltage (VGS) Max — [DATA_NEEDED: VGS maximum rating]
Total Gate Charge (Qg) — 2.6 nC
Power Dissipation (PD) at TA=25C — 1.3 W
工作接面溫度 — -55C to +150C
Qualification Level — Consumer (per JEDEC JSD47F)
Moisture Sensitivity Level — MSL1 (per IPC/JEDEC J-STD-020D)
RoHS Compliance — Compliant (no lead, no bromide, no halogen)

資料表與資源

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