IRFB4020PBF vs IRLS3036TRLPBF 比較
詳細並排比較 IRFB4020PBF 由 Infineon 與 IRLS3036TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFB4020PBF | IRLS3036TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | IR HEXFET (planar DMOS) |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC | 18 A | — |
| Power Dissipation (PD) at TC | 100 W | — |
| RDS(on) Maximum | 100 mOhm | — |
| Gate-Source Voltage (VGS) Maximum | 20 V | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 1.43 C/W | — |
| 工作接面溫度 | 175 C (max) | — |
| 封裝 | TO-220AB (through-hole) | D2PAK (TO-263), surface mount |
| 安裝類型 | Through Hole | Surface Mount |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| Lead-Free (PbF suffix) | Yes | — |
| Market Qualification | Consumer | — |
| Recommended Use | Class-D audio amplifier and high-efficiency switching applications | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25C | — | 270 A |
| Continuous Drain Current (Id) at Tc=100C | — | 195 A |
| Pulsed Drain Current (Idm) | — | 1100 A |
| Rds(on) max @ Vgs=10V | — | 1.9 mOhm |
| Gate-Source Threshold Voltage (Vgs(th)) | — | Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] |
| Total Gate Charge (Qg) typ | — | 91 nC |
| Gate-Source Voltage (Vgs) max | — | [DATA_NEEDED: Vgs max +/- V] |
| Power Dissipation (Pd) at Tc=25C | — | 380 W |
| 工作溫度範圍 | — | -55C to +175C |
| MSL 等級 | — | 1 |
| RoHS 狀態 | — | Compliant (PBF suffix) |
| Lead-Free | — | Yes (PBF suffix) |
| Integrated Body Diode | — | Yes (avalanche rated) |