IRFP2907PBF vs IRF1405PBF 比較

詳細並排比較 IRFP2907PBF 由 Infineon 與 IRF1405PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFP2907PBF IRF1405PBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRFP2907PBF —
Technology HEXFET Stripe Planar DMOS (N-Channel) HEXFET (Stripe Planar cell structure)
Drain-to-Source Voltage (V_DSS) 75 V —
Continuous Drain Current (I_D) at T_C = 25 C 209 A —
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V —
Power Dissipation (P_D) at T_C = 25 C 470 W —
Total Gate Charge (Q_g) 410 nC —
Maximum Junction Operating Temperature +175 C —
Package / Mounting Type TO-247AC (Through Hole) —
腳位數 3 (Gate, Drain, Source) —
RoHS Compliance Yes (Pb-free) —
Avalanche Rated Yes (repetitive avalanche rated) —
Body Diode Integral (no external anti-parallel diode required) —
Lead-Free Yes —
Part Number Suffix — PbF (lead-free, RoHS compliant)
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 55 V
Continuous Drain Current (I_D, Tc=25C) — 169 A
Continuous Drain Current (I_D, Tc=100C) — [DATA_NEEDED: I_D at Tc=100C]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current rating]
Maximum Power Dissipation (P_D, Tc=25C) — 330 W
R_DS(on) Maximum — 5.3 mOhm @ V_GS = 10 V
Gate Threshold Voltage (V_GS(th)) — 2.0 V to 4.0 V
Maximum Gate-Source Voltage (V_GS) — [DATA_NEEDED: maximum V_GS rating]
Operating Junction Temperature (T_J max) — 175 C
Storage Temperature Range — [DATA_NEEDED: storage temperature range]
封裝 — TO-220AB (through-hole)
安裝類型 — Through Hole
Qualification — JEDEC qualified, optimized for switching below 100 kHz
RoHS 狀態 — PbF suffix indicates lead-free / RoHS compliant
Single Pulse Avalanche Energy (E_AS) — [DATA_NEEDED: avalanche energy rating]
Thermal Resistance Junction-to-Case (R_theta_JC) — [DATA_NEEDED: thermal resistance R_theta_JC]

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