IRLZ34NSTRLPBF - 55V 30A N-Ch HEXFET MOSFET, D2PAK | Infineon
MPN： IRLZ34NSTRLPBF ✓ 啟用中IRLZ34NSTRLPBF 概覽
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch whose conduction channel forms between source and drain when VGS exceeds the threshold. Power MOSFETs belong to the broader family of discrete semiconductors > transistors > FETs > MOSFETs. The logic-level variant (sometimes abbreviated LL or LogicLvl in vendor catalogs) lowers the gate-drive requirement to match 5 V CMOS logic, eliminating the need for a dedicated gate-driver IC in many low-to-medium power designs.
The IRLZ34NSTRLPBF uses Infineon's fifth-generation HEXFET planar cell structure, providing a wide safe operating area (SOA) optimized for linear-mode and switching applications. The low 35 mOhm RDS(on) at VGS=5 V minimizes conduction losses, while the 16.7 nC Qg keeps drive losses small at switching frequencies under 100 kHz. The silicon is optimized for robust avalanche behavior, supporting unclamped inductive switching events common in solenoid, motor, and relay drive circuits.
Typical applications include low-voltage DC motor drives, solenoid and valve drivers, PWM-controlled lighting ballasts, and 12 V/24 V automotive relay replacements. The logic-level gate makes it especially well-suited to microcontroller-driven loads where the GPIO directly drives the gate without an intervening driver stage. Designers should account for the D2PAK thermal envelope and use adequate copper pour to keep Tj below 150 C under full load.
This page synthesizes distributor pricing, drop-in D2PAK alternatives, and practical PCB layout notes not collected in any single source on the manufacturer datasheet. As of 2026-09-13, pricing tiers and stock are verified against DigiKey, Mouser, LCSC, and Octopart.
直接替換替代品，適用於 IRLZ34NSTRLPBF — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IRLZ34NSTRLPBF （相同外形與佔位） — 差異在於 Package, Total Gate Charge (Qg), Technology, RoHS Status, Operating Junction Temperature.
IRLZ34NSPBF
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
IRFR1205TRPBF
✅ 直接替換聯絡詢價
查看資料表 →IRFR5305TRLPBF
✅ 直接替換聯絡詢價
查看資料表 →IRF5305STRLPBF
✅ 直接替換聯絡詢價
查看資料表 →IRFR5410TRRPBF
✅ 直接替換聯絡詢價
查看資料表 →IRFS4010TRLPBF
✅ 直接替換聯絡詢價
查看資料表 →IRLZ34NSTRLPBF 最大額定值與電氣特性
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at TC | 30 A |
| Pulsed Drain Current (IDM) | 110 A |
| RDS(on) at VGS=5V | 35 mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) |
| Total Gate Charge (Qg) | 16.7 nC |
| Power Dissipation (Ta) | 3.8 W |
| Power Dissipation (Tc) | 68 W |
| 封裝 | D2PAK (TO-263), surface mount |
| Built-in Body Diode | Yes |
| Configuration | Single with built-in diode |
| 安裝類型 | Surface Mount |
| Switching Frequency Optimization | Below 100 kHz |
| Cell Structure | HEXFET planar (5th generation) |
| Qualification | JEDEC standard |
| RoHS 狀態 | Compliant (Pb-free) |
IRLZ34NSTRLPBF 腳位配置
| 腳位 1 | Gate — Logic-level gate input; drive with 5 V CMOS |
| 腳位 2 | Drain — Drain connection (also electrically tied to the metal tab) |
| 腳位 3 | Source — Source connection |
| 腳位 Tab | Drain (Tab) — Metal tab internally connected to Drain; must be soldered to PCB copper pad for thermal dissipation |
安全工作區 (DC, Ta=25 C)
典型應用
IRLZ34NSTRLPBF 適用於 6 應用s: 12 V Automotive Lighting Drivers, DC Motor Drive (Brushed), Solenoid and Valve Driver, PWM-Controlled Lighting Ballast, Relay Replacement (Solid-State Switch), Battery Protection and Load Switching.
12 V Automotive Lighting Drivers
The IRLZ34NSTRLPBF's 55 V VDS rating provides substantial margin over 12 V automotive rails that can swing to 35-40 V during load-dump events. Logic-level gate drive enables direct 5 V GPIO control from automotive microcontrollers without a gate driver stage, simplifying headlamp, tail-light, and interior LED driver circuits. The 35 mOhm RDS(on) at VGS=5 V keeps conduction losses manageable at 5-10 A continuous loads, and the D2PAK tab solders to copper pour that doubles as a thermal dissipation area.
推薦
DC Motor Drive (Brushed)
The IRLZ34NSTRLPBF delivers 30 A continuous drain current, more than adequate for brushed DC motors up to roughly 200 W at 24 V. Logic-level gate input means the H-bridge or half-bridge can be driven directly from 5 V logic outputs or simple half-bridge driver ICs. The 16.7 nC Qg keeps PWM transition losses low for switching frequencies in the 1-25 kHz audible-noise-avoidance band. Freewheeling current is handled by the built-in body diode, simplifying PCB layout.
推薦
Solenoid and Valve Driver
Solenoids and fuel injection valves draw high inrush currents that decay through inductance once switched off, generating flyback voltages. The IRLZ34NSTRLPBF's avalanche-rated silicon and wide SOA tolerate unclamped inductive turn-off events, simplifying the drive circuit by eliminating external flyback diodes or TVS clamps. Logic-level gate drive allows direct microcontroller GPIO control in 12 V and 24 V industrial pneumatic systems.
推薦
PWM-Controlled Lighting Ballast
For PWM-dimmed LED strings, the IRLZ34NSTRLPBF's low gate charge (16.7 nC) supports PWM dimming frequencies up to several kHz without significant drive losses. The MOSFET can sit on the low side of an LED string with the drain tied to the LED cathode, switching at logic-level duty cycles from a microcontroller. The 55 V rating handles long strings while keeping conduction losses below 5% at typical currents.
推薦
Relay Replacement (Solid-State Switch)
The IRLZ34NSTRLPBF replaces electromechanical relays in 12 V/24 V systems where silent operation, longer life, and faster switching are required. At logic-level gate drive, the MOSFET turns on in microseconds versus relay coil delays of milliseconds, and bounces are eliminated entirely. The D2PAK surface-mount package simplifies automated assembly, while the 30 A continuous rating covers most relay-replacement applications including heating elements and fan control.
推薦
Battery Protection and Load Switching
The IRLZ34NSTRLPBF is widely used as a low-side disconnect switch in battery management systems for 12 V lead-acid and Li-ion packs. The logic-level gate allows enable control from a battery monitor IC, while the 35 mOhm RDS(on) at VGS=5 V adds minimal voltage drop during discharge. The D2PAK package handles the steady-state and short-duration inrush currents typical of cordless power tools and e-bike battery packs. Built-in body diode permits bidirectional current flow during precharge.
推薦
推薦產品摘要
工程參考資料，適用於 IRLZ34NSTRLPBF — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IRLZ34NSPBF | IRFR1205TRPBF | IRFR5305TRLPBF | IRF5305STRLPBF | IRFR5410TRRPBF | IRFS4010TRLPBF |
|---|---|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Polarity | N-Channel | N-Channel | N-Channel | P-Channel | P-Channel | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V | 55 V | 55 V | 55 V | 100 V | 100 V |
| Continuous Drain Current (ID) | 30 A | 30 A | 44 A | 31 A | 31 A | 13 A | 180 A |
| RDS(on) at VGS=5V | 35 mOhm | 35 mOhm | 27 mOhm | 65 mOhm (P-ch) | 65 mOhm (P-ch) | 120 mOhm | 4 mOhm |
| Logic-Level Gate Drive | Yes (5 V) | Yes (5 V) | Yes (5 V) | Yes (5 V) | Yes (5 V) | Yes (5 V) | Yes (5 V) |
| Built-in Body Diode | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
主要差異化特點
- Logic-level gate drive at standard RDS(on) (對比IRF540NPBF (standard 10 V gate drive))
- Surface-mount D2PAK for reflow assembly (對比IRLZ44NPBF (TO-220 through-hole))
- N-channel polarity for low-side switching (對比IRF5305STRLPBF (P-channel in same D2PAK))
設計說明
The D2PAK tab is electrically tied to the Drain and must be soldered to a PCB copper pad for both electrical and thermal performance. Estimated: at 30 A continuous drain current with 35 mOhm RDS(on), conduction losses reach roughly P = I²R = 900 * 0.035 = 31.5 W, far exceeding the 3.8 W Ta rating. A copper pour of at least 1 square inch (645 mm²) on the drain tab is mandatory to keep Tj below 150 C; without it, the device will thermally limit at much lower currents.
Use a minimum 2 oz copper layer (70 µm) on the drain tab pad for optimal thermal spreading, and place thermal vias (0.3 mm drill, 1 mm pitch) connecting the top copper to inner planes and bottom copper. The Gate trace should be kept short and routed away from switching nodes to minimize gate-loop inductance; add a 10-100 ohm gate-source resistor to prevent inadvertent turn-on from dV/dt coupling. A gate-source Zener clamp (typically 12-15 V) protects against over-voltage transients on the gate oxide.
Keep the source return path (low-inductance ground) as short as possible; the switching current loop should be minimized to reduce EMI and ringing. Place input/output bulk capacitors close to the MOSFET drain and source pads to localize the high-di/dt loop. For half-bridge and H-bridge designs, mirror the layout across the symmetry plane so source-current paths in both halves share the same parasitic inductance, balancing transient behavior.
Do not assume the D2PAK tab can be left floating in a thermally-isolated layout - the tab is the primary heat path. Avoid using IRLZ34NSTRLPBF above the 30 A continuous rating without active cooling or substantial copper; the part will enter thermal shutdown (or fail) well before that current if Ta exceeds 25 C. Finally, never drive the gate above the absolute maximum VGS of +/- 10 V (logic levels); use a gate-source Zener if the upstream driver can swing higher due to ringing.
合規資訊
Pb-free and RoHS compliant per Infineon product page. JEDEC qualified. AEC-Q100 automotive qualification is not explicitly listed for this part - if AEC-Q100 is required for automotive designs, an Infineon automotive-grade alternative should be selected and verified.
