IRS2110SPBF vs 2ED2738S01GXTMA1 比較

詳細並排比較 IRS2110SPBF 由 Infineon 與 2ED2738S01GXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2738S01GXTMA1 2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon

2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon

2ED2738S01GXTMA1 ✓ 啟用中

規格比較

參數 IRS2110SPBF 2ED2738S01GXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type High and Low Side, Half-Bridge —
Number of Drivers 2 —
輸出配置 Non-Inverting —
Peak Source/Sink Current 2.5 A / 2.5 A —
Offset Voltage (High-Side) Up to 500 V —
Logic Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (25 V abs max) —
Propagation Delay (typ.) 120 ns —
Rise Time (typ.) 25 ns —
Fall Time (typ.) 17 ns —
Undervoltage Lockout Yes (VCC and VBS) —
Input Logic Compatibility TTL / CMOS with hysteresis TTL
工作溫度範圍 -40 C to +125 C —
封裝 16-SOIC (SOIC-16 W) PG-VSON-10-5 (3x3 mm) with EP
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant (Pb-free) Compliant
MSL 等級 3 2 (1 year)
Driver Configuration — Half-Bridge (High-Side + Low-Side)
Output Current (Source, peak) — 4.0 A
Output Current (Sink, peak) — 8.0 A
Output Current (Source, typ) — 1.0 A
Output Current (Sink, typ) — 2.0 A
輸出數量 — 1
Input Type — Non-Inverting
Supply Voltage (VDD/VCC) — 6 V to 20 V
Bootstrap Supply Voltage — Up to 600 V (HS pin rating)
Propagation Delay (typ) — 120 ns
Channel-to-Channel Match — 40 ns
Rise/Fall Time (1 nF load) — 1.5 ns / 1.5 ns
Negative Transient Immunity (HS) — -10 V to +20 V transient
Under-Voltage Lockout — VCC and Bootstrap
Bootstrap Diode — Integrated
工作溫度 — -40C to +125C

資料表與資源

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