IRS2110STRPBF vs IRS2112STRPBF 比較

詳細並排比較 IRS2110STRPBF 由 Infineon 與 IRS2112STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2110STRPBF IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF ✓ 啟用中
Infineon
IRS2112STRPBF IRS2112STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IRS2112STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IRS2112STRPBF ✓ 啟用中

規格比較

參數 IRS2110STRPBF IRS2112STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Half-Bridge —
Number of Drivers 2 (High-Side and Low-Side) —
輸出數量 2 —
輸出類型 Non-Inverting —
Maximum Offset Voltage 500 V —
Gate Drive Supply (VCC) 10 V to 20 V —
Source/Sink Output Current (typ.) 2.5 A / 2.5 A —
Propagation Delay ton/toff (typ.) 30 ns / 30 ns —
Rise/Fall Time (typ.) 17 ns / 25 ns —
Logic Input Compatibility CMOS/TTL compatible (3.3 V logic compatible) 3.3 V, 5 V, 15 V CMOS/TTL
Bootstrap Diode Integrated —
Shutdown Input Active-low, forces both outputs low Yes (active-low)
Undervoltage Lockout Yes (VCC and VBS) Both channels (VCC and VBS)
工作溫度 -40 C to +150 C —
封裝 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel 16-pin SOIC wide-body
安裝類型 Surface Mount Surface Mount
MSL 等級 3 (168 hours) 2 (1 year floor life)
Lead-Free / RoHS Lead-Free, RoHS Compliant —
Configuration — Half-bridge (high-side + low-side)
High-side Offset Voltage (max) — 600 V
Output Source Current (typ) — 0.29 A
Output Sink Current (typ) — 0.6 A
Gate Drive Supply Range (VCC) — 10 V to 20 V
Logic Supply Range (VDD) — 3.3 V to 20 V
Propagation Delay (typ) — [DATA_NEEDED: propagation delay]
dV/dt Immunity — Yes (negative transient tolerant)
工作溫度範圍 — -40 C to +125 C
RoHS 狀態 — Compliant (Pb-free PBF suffix)

資料表與資源

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