ISC016N08NM8ATMA1 vs IPD046N08N5ATMA1 比較
詳細並排比較 ISC016N08NM8ATMA1 由 Infineon 與 IPD046N08N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC016N08NM8ATMA1 | IPD046N08N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | OptiMOS™ 5 80V |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | — |
| Pulsed Drain Current (IDM) at Tc | 268 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 263 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| 工作溫度範圍 | -55 C to +150 C (junction) | — |
| 封裝 | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | OptiMOS™ 5 trench MOSFET |
| RoHS 狀態 | Compliant | ROHS3 Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | — |
| MSL 等級 | 1 (per JEDEC J-STD-020E classification for SuperSO8) | 1 (per JEDEC J-STD-020) |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 80 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 90 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 4.6 mΩ |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Power Dissipation (PD) at Tc=25°C | — | 125 W |
| 工作接面溫度範圍 | — | -55 °C to +175 °C |
| 封裝 / 外殼 | — | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| Configuration | — | Single N-channel, 3-pin (Gate / Drain tab / Source) |