ISC046N13NM6ATMA1 vs IQD005N04NM6CGATMA1 比較
詳細並排比較 ISC046N13NM6ATMA1 由 Infineon 與 IQD005N04NM6CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC046N13NM6ATMA1 | IQD005N04NM6CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 6 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 135 V | — |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 211 W | — |
| 封裝 / 外殼 | PG-TDSON-8 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +175 C | -55 °C to +150 °C (TJ) |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 (trench FET) |
| Gate Drive (recommended) | 10 V (typical) | — |
| RoHS 狀態 | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| RDS(on) Typical | — | 0.5 mΩ |
| Continuous Drain Current (ID) at Ta | — | 58 A |
| Continuous Drain Current (ID) at Tc | — | 610 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed rating] |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 333 W |
| 封裝 | — | PG-TTFN-9-U02 (Source-Down 5x6 mm²) |
| 腳位數 | — | 9 |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| Lead-Free | — | Yes |
| Source Configuration | — | Source-Down (bottom-side source for PCB heatsinking) |