K3KL5L50DM-BGCU vs K3KL3L30CM-BGCU 比較
詳細並排比較 K3KL5L50DM-BGCU 由 Samsung Electronics 與 K3KL3L30CM-BGCU 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3KL5L50DM-BGCU | K3KL3L30CM-BGCU |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5X SDRAM | LPDDR5X SDRAM (Volatile DRAM) |
| Density | 128 Gb (16 GB) | — |
| 資料速率 | 8533 Mbps per pin | 8533 Mbps |
| 組織 | [DATA_NEEDED: organization (x)] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD voltage] | — |
| 封裝 | [DATA_NEEDED: package ball count / FBGA code] | FBGA-496 (BGCU) |
| 安裝類型 | Surface Mount (BGA) | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| 介面 | LPDDR5X (JEDEC low-power DRAM interface) | LPDDR5X (standard LPDDR ball interface) |
| Prefetch | 16n (LPDDR5/5X architecture) | — |
| Power Efficiency | approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) | Approx. 25% better than previous LPDDR5 generation (per Samsung) |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | — |
| Refresh | [DATA_NEEDED: refresh scheme] | — |
| RoHS 狀態 | unknown | [DATA_NEEDED: RoHS status] |
| Production Status | In production (in stock at distributors) | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| 記憶體容量 | — | 64 Gb (8 GB) |
| Memory Organization | — | x64 |
| Technology | — | LPDDR5X (JEDEC LPDDR5X-class low-power DRAM) |
| Die Configuration | — | Stacked multi-die DRAM |
| Application Segment | — | AI devices and automotive |
| Speed Improvement | — | Up to 1.25x faster than previous generation (per Samsung) |
| Supply Voltage Class | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Place of Origin (per distributor listing) | — | Johor, Malaysia |