K4A4G045WD-BCRC vs K4A4G085WG-BCWE 比較
詳細並排比較 K4A4G045WD-BCRC 由 Samsung Electronics 與 K4A4G085WG-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G045WD-BCRC | K4A4G085WG-BCWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (Volatile) |
| Density | 4 Gb | — |
| 組織 | 1G x4 | — |
| Die Generation | D-die | — |
| Supply Voltage VDD | 1.2 V | — |
| Speed Grade / Data Rate | BCRC (2400 Mbps per Samsung product selection guide) | — |
| 封裝 | TFBGA-78 (FBGA-78) | FBGA-78 (BCW) |
| Number of Terminals | 78 | — |
| Self Refresh | Yes | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Clock Frequency | [DATA_NEEDED: CK frequency for BCRC bin] | — |
| CAS 延遲 | [DATA_NEEDED: CL for BCRC bin] | — |
| Bank Architecture | DDR4 8 internal banks with bank groups | — |
| Refresh | Self refresh supported (per Partstack listing) | [DATA_NEEDED: refresh rate specification] |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| Lead Free Status | [DATA_NEEDED: lead-free status] | — |
| Packaging Option | [DATA_NEEDED: tape and reel quantity] | — |
| 記憶體容量 | — | 4 Gb |
| Memory Organization | — | 512M x 8 |
| 資料速率 | — | 3200 Mbps/pin |
| Speed Class | — | DDR4-3200 |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | D-die DDR4 |
| 介面 | — | Parallel (DDR4) |
| Burst Length | — | BL8 |
| DLL Mode | — | DLL Enabled (per datasheet timing) |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range] |
| Packaging | — | Tray |