K4A4G085WD-BCRC vs MT40A512M8RH-075E:B 比較
詳細並排比較 K4A4G085WD-BCRC 由 Samsung Electronics 與 MT40A512M8RH-075E:B 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G085WD-BCRC | MT40A512M8RH-075E:B |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Memory Density | 4 Gbit | — |
| 組織 | 512M x 8 | 512M x 8 |
| 記憶體類型 | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| 資料速率 | 2400 Mb/s (PC2400) | 2666 MT/s (DDR4-2666) |
| 供應電壓 | 1.2 V | — |
| 封裝 | FBGA-78 (TFBGA) | 78-FBGA (9 x 10.5 mm), TFBGA |
| Number of Terminals | 78 | — |
| 介面 | Parallel | — |
| Access Mode | Multi-bank page burst | — |
| 安裝類型 | Surface Mount | Surface Mount |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | — |
| 工作溫度範圍 | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | Refresh max interval extension at extended TC temperature range (125C capable per family features) |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| MSL 等級 | [DATA_NEEDED: MSL Level] | — |
| Density | — | 4 Gbit |
| Clock Frequency | — | 1333 MHz (1.33 GHz) |
| VDD Supply Voltage | — | 1.2 V +/-60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/-60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV/+250 mV |
| 介面類型 | — | Parallel |
| I/O Structure | — | 1.2V pseudo open-drain |
| 參考電壓 | — | On-die internal adjustable VREFDQ generation |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range (standard grade)] |
| Speed Grade Suffix | — | -075E |
| Packaging Option Suffix | — | :B (ball map B designation per Mouser listing) |