K4A4G085WD-BCRC - 4Gb DDR4-2400 SDRAM 512Mx8 | Samsung
MPN： K4A4G085WD-BCRC ✓ 啟用中K4A4G085WD-BCRC 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both the rising and falling edges of the clock signal, doubling effective bandwidth compared to SDR memory. Within the memory hierarchy, DRAM sits below CPU caches and above storage devices such as NAND flash, serving as the primary working memory in computing systems. The JEDEC-standardized DDR4 generation operates at 1.2V, down from DDR3's 1.5V, reducing system power while raising transfer rates.
Key features of the K4A4G085WD-BCRC include the 4Gb D-die configuration from Samsung's DDR4 family, a x8 data interface suitable for controllers with narrower memory buses, and the space-saving 78-ball fine-pitch BGA footprint that supports high-density memory subsystems on compact PCBs. Samsung continues to lead the industry with one of the broadest DRAM portfolios, and this device is found in applications from embedded controllers to computing modules.
Technically, the device uses a multi-bank page burst access architecture. As a DDR4 component, it runs from a single 1.2V supply rail, requiring a memory controller that implements DDR4 initialization, training, and refresh scheduling. The x8 organization means a 64-bit system bus is typically populated with eight devices per rank; single-device designs can use the x8 data mask functionality available in DDR4 x8 parts.
Typical applications include industrial controllers, embedded computing modules, network appliances, firmware execution and data logging buffers, and replacement sourcing for DDR3-era designs migrating to the DDR4 platform.
Design consideration: verify that your memory controller supports DDR4-2400 speed bin timing and that the power delivery network supplies a clean 1.2V rail with proper VTT termination, since signal integrity at 2400 Mb/s on fly-by routed address/command buses demands careful length matching and ODT tuning.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替換替代品，適用於 K4A4G085WD-BCRC — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4A4G085WD-BCRC （相同外形與佔位） — 差異在於 Package, Interface, Data Rate, Memory Type, Refresh.
K4A4G085WD-BCPB
✅ 直接替換聯絡詢價
查看資料表 →K4A4G085WE-BCRC
✅ 直接替換聯絡詢價
查看資料表 →K4A4G045WD-BCRC
✅ 直接替換聯絡詢價
查看資料表 →K4A4G045WD-BCPB
✅ 直接替換聯絡詢價
查看資料表 →MT40A512M8RH-075E:B
✅ 直接替換聯絡詢價
查看資料表 →K4A4G085WD-BCRC 最大額定值與電氣特性
| Memory Density | 4 Gbit |
| 組織 | 512M x 8 |
| 記憶體類型 | DDR4 SDRAM (D-die) |
| 資料速率 | 2400 Mb/s (PC2400) |
| 供應電壓 | 1.2 V |
| 封裝 | FBGA-78 (TFBGA) |
| Number of Terminals | 78 |
| 介面 | Parallel |
| Access Mode | Multi-bank page burst |
| 安裝類型 | Surface Mount |
K4A4G085WD-BCRC fbga-78 (tfbga) 腳位配置指南
K4A4G085WD-BCRC（fbga-78 (tfbga) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K4A4G085WD-BCRC.
請參閱 資料表 以查看完整腳位配置。
典型應用
K4A4G085WD-BCRC 適用於 6 應用s: Industrial Controllers, Embedded Computing Modules, FPGA-Based Data Acquisition, Firmware Boot and Logging, Networking Equipment, DDR3-to-DDR4 Migration Replacements.
Industrial Controllers
Industrial PLCs and motion controllers rely on DRAM for run-time data, recipe storage buffering, and firmware execution. The K4A4G085WD-BCRC fits this role with 4Gb of DDR4 at 2400 Mb/s, providing up to 2.4 GB/s of peak bandwidth per device on a x8 bus, which is ample for deterministic control loops and HMI buffering. Its 1.2V supply keeps system power low, important in sealed fanless enclosures, and the 78-ball FBGA package (approximately 7.5 x 9.5 mm class footprint) mounts on compact industrial PCBs. Designers typically pair it with an embedded processor or FPGA hard DDR4 controller and validate across the industrial temperature range before release.
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Embedded Computing Modules
COMs and SoMs based on ARM or x86 SoCs use x8 DDR4 devices to populate 64-bit memory buses. Eight K4A4G085WD-BCRC devices yield 4GB on a 64-bit bus at DDR4-2400, matching the memory requirements of Linux-based gateways and edge computing nodes. The device's 1.2V JEDEC DDR4 interface interoperates with standard memory controllers from all major silicon vendors, and the fly-by address/command routing used in DDR4 keeps PCB layer count manageable. Memory sizing at 4Gb per device balances density against cost, making it a common BOM line for volume module production and second-source qualification alongside Micron equivalents.
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FPGA-Based Data Acquisition
High-speed data acquisition systems use FPGA memory controllers (Xilinx MIG, Intel EMIF) to buffer ADC streams into DDR4. The K4A4G085WD-BCRC offers 4Gb of buffering per chip; with 2400 Mb/s transfer rates and multi-bank page burst access, a x8 device sustains the sustained-write bandwidth needed for streaming applications. Its 1.2V interface reduces I/O power compared to DDR3, which matters in dense acquisition cards with dozens of memory chips. Designers should budget controller calibration (write leveling, read training) time at startup and route DQS/DQ as length-matched pairs with on-die termination (ODT) tuning to meet signal integrity targets at speed.
推薦
Firmware Boot and Logging
Embedded systems execute firmware from DRAM after boot code loads from flash, and log operational data to memory before committing to storage. The K4A4G085WD-BCRC provides 4Gb of fast execution memory with DDR4-2400 bandwidth, accelerating boot decompression and application runtime versus DDR3 or lower-density solutions. Distributor listings (globalspec) explicitly cite firmware boot and embedded logging among its target uses. Its x8 data mask support enables efficient partial writes for logging workloads. Pair with a supervisor device to guarantee clean power sequencing so that DDR4 initialization and memory training complete reliably at every power cycle.
推薦
Networking Equipment
Routers, switches, and network appliances use DDR4 for packet buffers, routing tables, and control-plane software. The K4A4G085WD-BCRC delivers 4Gb per device with DDR4-2400 bandwidth, and its x8 organization allows flexible bus width scaling - from single-chip 8-bit designs in edge devices to 64-bit ranks in aggregation equipment. The 1.2V operation reduces total platform power, a key metric in always-on networking hardware where every watt affects thermal design and operating cost. The 78-ball FBGA package supports the dense memory arrangements typical of switch line cards, and second sourcing with Micron equivalents protects supply continuity for long-life network products.
推薦
DDR3-to-DDR4 Migration Replacements
Designs migrating from DDR3 platforms such as MT47H32M16NF-25E-based systems to DDR4 can adopt the K4A4G085WD-BCRC to gain double the density per die shrink and roughly 30-40% lower I/O power at 1.2V versus DDR3L. Distributor cross-reference data (IC-Components) positions this Samsung D-die part as a replacement-sourcing candidate alongside Micron and SK Hynix equivalents. Migration requires a DDR4-capable controller, revised power tree (1.2V rails and VTT), and PCB respin for the FBGA footprint, but the payoff is higher bandwidth (2400 Mb/s class), lower standby power, and an active, multi-sourced supply base for long production lifetimes.
推薦
推薦產品摘要
工程參考資料，適用於 K4A4G085WD-BCRC — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4A4G085WD-BCPB | K4A4G085WE-BCRC | MT40A512M8RH-075E:B |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Package | FBGA-78 (TFBGA) | FBGA-78 (TFBGA) - same | FBGA-78 (TFBGA) - same | FBGA (DDR4 standard ballout) |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Generation | D-die | D-die | E-die (newer) | Micron E-die class |
主要差異化特點
- Samsung D-die 4Gb density with established production history (對比K4A4G085WE-BCRC)
- Multi-vendor drop-in second sourcing at identical 512M x 8 organization (對比MT40A512M8RH-075E:B)
- Full 4Gb capacity vs family 2Gb variants in same footprint (對比K4A4G045WD-BCRC)
設計說明
Supply the K4A4G085WD-BCRC from a clean 1.2V rail per the JEDEC DDR4 standard. Use separate decoupling for VDD (core) and VDDQ (I/O): a bulk 47-100 uF capacitor per device group plus 0.1 uF ceramics at each supply ball. Generate the VTT termination rail (0.6V) with a dedicated sink-source LDO or DDR termination regulator sized for the fly-by bus load. Estimated: at DDR4-2400 with ODT enabled, per-device VDDQ current is typically in the tens-to-low-hundreds of mA range depending on bus utilization - verify against the datasheet IDD specifications for your actual speed bin and use pattern.
DDR4 uses fly-by routing for address/command/clock with on-die termination, while DQ/DQS pairs require strict length matching within each byte lane (typically +/-5 mil intra-pair). Keep the 78-ball FBGA fanout to a dedicated inner layer pair with a solid reference plane; avoid splitting the reference under DQS strobes. Match trace lengths among the eight devices of a 64-bit rank and place the first device closest to the controller. These constraints are standard JEDEC DDR4 layout practice and should be validated with SI simulation at 2400 Mb/s.
The most common failure mode when second-sourcing DDR4 is skipping controller re-training: even pin-compatible parts from different die generations (D-die vs E-die, or Micron vs Samsung) can require different write-leveling and read-eye training results. Ensure your bootloader runs full DDR4 training every power-up rather than using hardcoded training values. Also confirm the ordering code suffix: -BCRC vs -BCPB differ in ball/plating finish (RC vs PB designation), which can matter for soldering profiles and moisture sensitivity handling per the package MSL rating.
合規資訊
Compliance status not explicitly stated in the provided web data. The PB-suffix Samsung variants are lead-free ball/plating designations; verify RoHS/REACH declarations via the Samsung Semiconductor product page.
