K4A4G085WF-BITD vs MT40A512M8RH-075E:B 比較
詳細並排比較 K4A4G085WF-BITD 由 Samsung Electronics 與 MT40A512M8RH-075E:B 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G085WF-BITD | MT40A512M8RH-075E:B |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| 組織 | 512M x 8 | 512M x 8 |
| Speed | 2666 Mbps (MT/s) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| 工作溫度 | -40C to +95C | [DATA_NEEDED: operating temperature range (standard grade)] |
| 封裝 | 78-ball FBGA (78FBGA) | 78-FBGA (9 x 10.5 mm), TFBGA |
| Bank Architecture | 8 banks x 4 bank groups | — |
| Burst Length | BL8 | — |
| CAS 延遲 | CL19 (typical at 2666 Mbps) | — |
| 安裝類型 | Surface Mount (BGA) | Surface Mount |
| 介面 | Parallel, DDR4 SSTL12 | — |
| Refresh | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) | Refresh max interval extension at extended TC temperature range (125C capable per family features) |
| Termination | ODT / dynamic ODT | — |
| Data Mask | DM supported (x8) | — |
| Application Grade | Industrial | — |
| 資料速率 | — | 2666 MT/s (DDR4-2666) |
| Clock Frequency | — | 1333 MHz (1.33 GHz) |
| VDD Supply Voltage | — | 1.2 V +/-60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/-60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV/+250 mV |
| 介面類型 | — | Parallel |
| I/O Structure | — | 1.2V pseudo open-drain |
| 參考電壓 | — | On-die internal adjustable VREFDQ generation |
| Speed Grade Suffix | — | -075E |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS status] |
| Packaging Option Suffix | — | :B (ball map B designation per Mouser listing) |