K4AAG085WM-BCWE vs H5ANAG8NBJR-VKC 比較
詳細並排比較 K4AAG085WM-BCWE 由 Samsung Electronics 與 H5ANAG8NBJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4AAG085WM-BCWE | H5ANAG8NBJR-VKC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| 組織 | 2G x 8 | 2G x 8 |
| 資料速率 | 3200 Mbps (DDR4-3200) | — |
| 供應電壓 | 1.2 V | 1.14 V to 1.26 V (VDDQ) |
| 工作溫度 | 0C to +85C | 0C to +85C |
| 封裝 | 78FBGA | FBGA-78 |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | DDR4 (JEDEC-standard) | — |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant, Lead-Free and Halogen-Free |
| MSL 等級 | [DATA_NEEDED: MSL level] | — |
| Speed Grade | — | DDR4-2666 (2666 Mbps/pin) |
| Clock Frequency | — | 1.6 GHz (internal interface per distributor data) |
| Standby Current | — | 30 mA (operating, per distributor listing) |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| Refresh Interval | — | [DATA_NEEDED: tREFI refresh interval] |