K4AAG165WA-BCPB vs K4A8G165WB-BCPB 比較
詳細並排比較 K4AAG165WA-BCPB 由 Samsung Electronics 與 K4A8G165WB-BCPB 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4AAG165WA-BCPB | K4A8G165WB-BCPB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Volatile DRAM (DDR4 SDRAM) | DDR4 SDRAM |
| Technology | DDR4 | — |
| Density | 16 Gb | 8 Gb |
| 組織 | 1G x 16 | 512M x 16 |
| 資料速率 | 3200 Mbps | 2133 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Interface Voltage (VDDQ) | 1.2 V | — |
| 封裝 | FBGA-96 | 96FBGA (TFBGA) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature for BCPB grade] | 0C to +85C |
| Memory Format | DRAM | — |
| Packaging | Tray | — |
| Product Status | Active | — |
| Power Consumption | 25% lower than DDR3 (per Samsung DDR4 family) | — |
| Bank Group Architecture | Yes (DDR4 internal bank groups) | — |
| On-Die Termination (ODT) | Yes | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant (per Lisleapex listing) |
| Max Capacity Family | Up to 32GB component (Samsung DDR4 family) | — |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | Rectangular, bottom terminal position |
| Die Generation | — | 8Gb B-die |
| 介面 | — | DDR4 (synchronous, double data rate) |
| Bank Groups | — | DDR4 bank-group architecture |
| Refresh | — | [DATA_NEEDED: refresh specification] |