K4B4G1646D-BPH90 vs K4B4G1646D-BMH9 比較
詳細並排比較 K4B4G1646D-BPH90 由 Samsung Electronics 與 K4B4G1646D-BMH9 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4B4G1646D-BPH90 | K4B4G1646D-BMH9 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4Gb |
| 組織 | 32M x 16 | 256M x 16 |
| Number of Banks | 8 | 8 |
| 資料速率 | 2133 Mb/s per pin | 2133 Mb/s per pin |
| 供應電壓 | 1.35V (DDR3L) | — |
| 封裝 | 96FBGA | 96-ball FBGA (9x13mm) |
| 工作溫度 | 0°C to +85°C | [DATA_NEEDED: operating temperature range] |
| CAS 延遲 | Programmable up to 14 | Programmable |
| Burst Length | 8, 4 (with burst chop) | 8 and 4 |
| On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Lead-Free | Yes | Yes |
| 無鹵素 | Yes | Yes |
| RoHS Compliant | Yes | — |
| Supply Voltage (VDD) | — | 1.35V |
| Supply Voltage (VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| RoHS 狀態 | — | Compliant |