K4B4G1646D-BPH90 vs K4B4G1646D-BMH9 Comparison
Detailed side-by-side comparison of K4B4G1646D-BPH90 by Samsung Electronics and K4B4G1646D-BMH9 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 ✓ Active
Specification Comparison
| Parameter | K4B4G1646D-BPH90 | K4B4G1646D-BMH9 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4Gb |
| Organization | 32M x 16 | 256M x 16 |
| Number of Banks | 8 | 8 |
| Data Rate | 2133 Mb/s per pin | 2133 Mb/s per pin |
| Supply Voltage | 1.35V (DDR3L) | — |
| Package | 96FBGA | 96-ball FBGA (9x13mm) |
| Operating Temperature | 0°C to +85°C | [DATA_NEEDED: operating temperature range] |
| CAS Latency | Programmable up to 14 | Programmable |
| Burst Length | 8, 4 (with burst chop) | 8 and 4 |
| On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| RoHS Compliant | Yes | — |
| Supply Voltage (VDD) | — | 1.35V |
| Supply Voltage (VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| RoHS Status | — | Compliant |