K4RAH086VB-BCQK vs K4RAH165VB-BCQK 比較
詳細並排比較 K4RAH086VB-BCQK 由 Samsung Electronics 與 K4RAH165VB-BCQK 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4RAH086VB-BCQK | K4RAH165VB-BCQK |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $41.02 | — |
| 記憶體類型 | DDR5 SDRAM (Volatile DRAM) | DDR5 SDRAM |
| 記憶體容量 | 16 Gb | 16 Gb |
| Memory Organization | 2G x 8 | 1G x 16 |
| 資料速率 | 4800 Mbps | 4800 Mbps |
| 供應電壓 | 1.1 V | — |
| 介面 | Parallel | — |
| Technology | DDR5 | — |
| ECC | On-die ECC | — |
| 封裝 | FBGA-82 | 106-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Product Status | Active | — |
| Operating Mode | DLL Enabled mode | — |
| Series | K4RAH0x6VB (DDR5 16Gb B-die family) | — |
| Packaging | Tray | Tray |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.1 V |
| Error Correction | — | On-die ECC |
| 功能特色 | — | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| Memory Format | — | DRAM (volatile) |
| 生命週期狀態 | — | Active |
| Unit Price | — | [DATA_NEEDED: unit price] |