K4RAH165VB-BCWM vs K4RAH086VB-BCWM 比較
詳細並排比較 K4RAH165VB-BCWM 由 Samsung Electronics 與 K4RAH086VB-BCWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ 啟用中規格比較
| 參數 | K4RAH165VB-BCWM | K4RAH086VB-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $44.55 |
| 記憶體類型 | DDR5 SDRAM (volatile DRAM) | DDR5 SDRAM |
| 記憶體容量 | 16 Gb | 16 Gb |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| 供應電壓 | 1.1 V | 1.1 V |
| Technology | DDR5 | DRAM (volatile) |
| 封裝 | FBGA-106 | FBGA-82 |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0C to +85C | Commercial temperature range (per datasheet) |
| Maximum Data Rate (DDR5 family) | up to 7200 Mbps | — |
| On-die ECC | Yes | — |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| Speed Grade (suffix BCWM) | [DATA_NEEDED: speed grade / CAS latency] | — |
| Packaging | Tray | — |
| 組織 | — | 2G x 8 |
| 資料速率 | — | 5600 Mbps |
| 介面 | — | DDR5 (parallel) |
| Speed Grade | — | BCWM |
| ECC | — | On-die ECC |
| Burst Length | — | 32 (BL32, DDR5 standard) |
| 生命週期狀態 | — | Active |
| Sub-channel Architecture | — | Dual independent 32-bit sub-channels (per DDR5 spec) |