K4RBH046VM-BCWM vs K4RHE165VB-BCWM 比較
詳細並排比較 K4RBH046VM-BCWM 由 Samsung Electronics 與 K4RHE165VB-BCWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4RBH046VM-BCWM - 32Gb DDR5 5600Mbps DRAM | Samsung | Server
K4RBH046VM-BCWM ✓ 啟用中
規格比較
| 參數 | K4RBH046VM-BCWM | K4RHE165VB-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| 記憶體容量 | 32 Gb | — |
| Memory Organization | 2G x 4 | — |
| 資料速率 | 5600 Mbps | 5600 Mbps |
| 供應電壓 | 1.1 V | 1.1 V |
| Memory Interface | Parallel | — |
| Technology | DRAM | — |
| Memory Format | Volatile | — |
| 工作溫度 | 0 C to 85 C | 0 C to +85 C |
| 封裝 | 78-ball FBGA | 106 FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Product Status | Sample | Mass Production |
| Manufacturer | Samsung Electronics | — |
| Speed Grade | DDR5-5600 | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Access Time / CL | [DATA_NEEDED: CAS Latency] | — |
| Density | — | 24 Gb |
| 組織 | — | 1G x 16 |
| 介面 | — | Parallel, DDR5 |
| Generation | — | DDR5 |
| Application Segment | — | DDR5 memory modules and HPC systems |
| Speed Grade Suffix | — | BCWM |
| tCK (Clock Period) | — | [DATA_NEEDED: clock period] |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency] |