K4RBH165VB-BCQK vs K4RAH165VB-BCWM 比較

詳細並排比較 K4RBH165VB-BCQK 由 Samsung Electronics 與 K4RAH165VB-BCWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K4RBH165VB-BCQK K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK ✓ 啟用中
Samsung Electronics
K4RAH165VB-BCWM K4RAH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung

K4RAH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung

K4RAH165VB-BCWM ✓ 啟用中

規格比較

參數 K4RBH165VB-BCQK K4RAH165VB-BCWM
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR5 SDRAM DDR5 SDRAM (volatile DRAM)
記憶體容量 16 Gb 16 Gb
組織 1G x 16 —
資料速率 4800 Mbps/pin —
Speed Grade BCQK (4800 Mbps) —
工作溫度 0 C to +85 C 0C to +85C
Self Refresh Auto self-refresh —
Reset Function Asynchronous reset —
Error Correction On-chip (on-die) ECC —
Write Leveling Yes Yes
CRC Function Yes Yes
ZQ Calibration Yes Yes
供應電壓 [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5] 1.1 V
Package Type [DATA_NEEDED: exact package code, expected FBGA surface mount] —
安裝類型 Surface Mount Surface Mount
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
Burst Length [DATA_NEEDED: burst length (BL16 per DDR5 standard)] —
Memory Organization — 1G x 16
Memory Interface — Parallel
Technology — DDR5
封裝 — FBGA-106
Maximum Data Rate (DDR5 family) — up to 7200 Mbps
On-die ECC — Yes
Auto Self-Refresh — Yes
Asynchronous Reset — Yes
Speed Grade (suffix BCWM) — [DATA_NEEDED: speed grade / CAS latency]
Packaging — Tray

資料表與資源

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