K9F2808Q0B vs K9F6408Q0C 比較
詳細並排比較 K9F2808Q0B 由 Samsung Electronics 與 K9F6408Q0C 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics
K9F6408Q0C Obsolete規格比較
| 參數 | K9F2808Q0B | K9F6408Q0C |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 停產終止 | Obsolete |
| 記憶體類型 | SLC NAND Flash (parallel) | NAND Flash (SLC) |
| Density | 128 Mbit | — |
| 組織 | 16M x 8 | 8M x 8 |
| Operating Voltage (VCC) | 1.7 V to 1.95 V | 1.65 V to 1.95 V |
| Read Access Speed | 50 ns | — |
| Cell Type | SLC (1 bit/cell) | — |
| 介面 | 8-bit multiplexed address/data | Parallel, 8-bit multiplexed I/O |
| 封裝 | 63-pin TBGA | — |
| Temperature Grade | C (commercial), I (industrial) | C (commercial), i (industrial) |
| 安裝類型 | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | 528 bytes (512 data + 16 spare) |
| Block Size | [DATA_NEEDED: block size] | — |
| Typical Read Current (Icc1) | [DATA_NEEDED: Icc1] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| RoHS 狀態 | unknown | [DATA_NEEDED: RoHS status] |
| Production Status | Mass production (per legacy datasheet); now EOL/obsolete | — |
| Memory Capacity | — | 64 Mbit (8 M x 8 bit main + 256 K x 8 bit spare) |
| Access Time | — | 10 us (read cycle, family listing) |
| Package (HIB0 variant) | — | 48-ball TBGA |
| Package (family TBGA note) | — | 9 mm x 11 mm 63-ball changed to 6 mm x 8.5 mm 48-ball |
| Spare Area | — | 256K x 8 bit |
| Control Signals | — | CLE, ALE, CE, WE, RE, WP, R/B |
| Bad Block Management | — | Host-managed (marking in spare area) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |