K9PDG08U5M vs K9F2808Q0B 比較
詳細並排比較 K9PDG08U5M 由 Samsung Electronics 與 K9F2808Q0B 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9PDG08U5M | K9F2808Q0B |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | EEPROM | Memory ICs |
| 生命週期狀態 | 停產終止 | 停產終止 |
| 記憶體類型 | NAND Flash (SLC) | SLC NAND Flash (parallel) |
| Density | 4 Gbit | 128 Mbit |
| 組織 | x8 (multiplexed I/O) | 16M x 8 |
| 供應電壓 | [DATA_NEEDED: supply voltage range] | — |
| 封裝 | TSOP1-48 | 63-pin TBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | unknown |
| Operating Voltage (VCC) | — | 1.7 V to 1.95 V |
| Read Access Speed | — | 50 ns |
| Cell Type | — | SLC (1 bit/cell) |
| 介面 | — | 8-bit multiplexed address/data |
| Temperature Grade | — | C (commercial), I (industrial) |
| Typical Read Current (Icc1) | — | [DATA_NEEDED: Icc1] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Production Status | — | Mass production (per legacy datasheet); now EOL/obsolete |