K9T1G08U0M-PIB0 vs MT29F1G08ABAEAWP-IT:E 比較
詳細並排比較 K9T1G08U0M-PIB0 由 Samsung Electronics 與 MT29F1G08ABAEAWP-IT:E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9T1G08U0M-PIB0 | MT29F1G08ABAEAWP-IT:E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | NRND | 啟用中 |
| 記憶體類型 | Non-volatile NAND Flash (SLC) | — |
| Density | 1 Gbit (128 MB) | — |
| 組織 | 128M x 8 bit | 128M x 8 |
| Cell Technology | SLC (Single-Level Cell) | — |
| 介面 | Asynchronous NAND, 8-bit I/O bus | Parallel |
| Page Size | 2 Kbytes + 64 bytes spare area | 2048 bytes + 64 bytes spare |
| Block Size | 128 Kbytes (64 pages per block) | 128 KB |
| VCC Supply Voltage | 2.7 V to 3.6 V | — |
| 工作溫度 | [DATA_NEEDED: industrial vs commercial grade] | -40C to +85C |
| 封裝 | 48-pin TSOP Type I (WSOP1) | TSOP-48 |
| Pb-Free (Lead-Free) | Yes (PIB0 suffix indicates Pb-free) | — |
| RoHS Compliance | Compliant (Pb-free variant) | — |
| Endurance (P/E Cycles) | [DATA_NEEDED: typical P/E endurance spec] | — |
| Data Retention | [DATA_NEEDED: data retention spec] | 10 years |
| Programming Time per Page | [DATA_NEEDED: typical tPROG] | — |
| Block Erase Time | [DATA_NEEDED: typical tBERS] | — |
| 安裝類型 | Surface Mount (TSOP) | Surface Mount |
| Command Set | Standard NAND (ONFI-compatible legacy commands) | — |
| 記憶體容量 | — | 1 Gbit (128 MB) |
| 供應電壓 | — | 3.3 V |
| Access Time | — | 25 ns |
| Program Time | — | 200 us (typical) |
| Erase Time | — | 2 ms (typical) |
| Endurance | — | 100K program/erase cycles |
| RoHS 狀態 | — | Compliant |