LM358AD vs LM358DR 比較

詳細並排比較 LM358AD 由 STMicroelectronics 與 LM358DR 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 LM358AD LM358DR
品牌 STMicroelectronics Texas Instruments
類別 Amplifier ICs Amplifier ICs
生命週期狀態 啟用中 啟用中
Amplifier Type General Purpose, Low Power General Purpose Operational Amplifier
Number of Channels 2 (Dual) —
Gain-Bandwidth Product (GBP) 1.1 MHz —
Slew Rate 0.6 V/µs 0.3 V/µs
Supply Voltage Range (Single) 3 V to 30 V —
Supply Voltage Range (Dual) ±1.5 V to ±16 V —
Input Offset Voltage [DATA_NEEDED: input offset voltage] 2 mV (typ), 7 mV (max)
Input Bias Current 45 nA (typical) —
Quiescent Current (per amplifier) 0.7 mA (typical) —
Input Common-Mode Range 0 V to VCC−1.5 V —
Output Voltage Swing [DATA_NEEDED: output swing to rail] —
工作溫度範圍 0 °C to +70 °C —
封裝 8-pin SOIC SOIC-8 (D)
安裝類型 Surface Mount Surface Mount
ESD Protection Yes (HBM, on inputs) —
Internal Frequency Compensation Yes —
RoHS 狀態 Compliant Compliant
Number of Circuits — 2
Gain Bandwidth Product — 700 kHz
Supply Voltage (Single) — 3 V to 32 V
Supply Voltage (Dual) — ±1.5 V to ±16 V
Supply Current (per channel) — 0.7 mA (typ)
Common-Mode Input Range — Extends to ground (V-)
Output Current — 20 mA (typ, short-circuit protected)
Minimum Load Resistance — 2 kΩ
工作溫度 — 0°C to +70°C
Internal Compensation — Yes (unity-gain stable)

資料表與資源

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