M25P16-VMN3PB vs M25P16-VMN3TPB 比較

詳細並排比較 M25P16-VMN3PB 由 Micron Technology 與 M25P16-VMN3TPB 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M25P16-VMN3PB M25P16-VMN3PB - 16Mb SPI NOR Flash 75MHz SOIC-8 | Micron

M25P16-VMN3PB - 16Mb SPI NOR Flash 75MHz SOIC-8 | Micron

M25P16-VMN3PB ✗ 停產
Micron Technology
M25P16-VMN3TPB M25P16-VMN3TPB - 16Mbit SPI NOR Flash 75MHz | Micron

M25P16-VMN3TPB - 16Mbit SPI NOR Flash 75MHz | Micron

M25P16-VMN3TPB ✓ 啟用中

規格比較

參數 M25P16-VMN3PB M25P16-VMN3TPB
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 停產終止 啟用中
記憶體類型 Serial NOR Flash, SLC NOR Flash (Serial SPI)
Memory Density 16 Mbit (16,777,216 bits) —
組織 2 M x 8 (2,000,000 bytes x 8) 2 Mbyte x 8
介面 SPI SPI Serial
最大時脈頻率 75 MHz 75 MHz
供應電壓 2.7 V to 3.6 V 2.7 V to 3.6 V (single supply)
Write/Erase Endurance 100,000 cycles —
工作溫度 -40C to +125C -40C to +85C
Temperature Grade Automotive —
封裝 8-SO (SOIC, 208 mil SOP) 8-SOIC (3.90 mm width, 150 mil)
Number of Terminals 8 —
Maximum Seated Height 1.75 mm —
安裝類型 Surface Mount Surface Mount
Product Longevity Program Yes —
Access Time 15 ns 15 ns
Write Protection Hardware (WP#) and software block protection Advanced write-protection mechanisms
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
記憶體容量 — 16 Mbit (2 M x 8)
Page Program Time — 0.64 ms typ (256-byte page)
Sector Erase Time — 0.6 s typ (512 Kbit sector)
Bulk Erase Time — 13 s typ (16 Mbit)
Sector Count — 32 sectors of 64 Kbyte
Packaging — Tape & Reel (TPB suffix)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價