M25P16-VMN3PB vs M25P80-VMN3PB 比較

詳細並排比較 M25P16-VMN3PB 由 Micron Technology 與 M25P80-VMN3PB 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M25P16-VMN3PB M25P16-VMN3PB - 16Mb SPI NOR Flash 75MHz SOIC-8 | Micron

M25P16-VMN3PB - 16Mb SPI NOR Flash 75MHz SOIC-8 | Micron

M25P16-VMN3PB ✗ 停產
Micron Technology
M25P80-VMN3PB M25P80-VMN3PB - 8Mbit SPI NOR Flash 75MHz SOIC-8 | Micron

M25P80-VMN3PB - 8Mbit SPI NOR Flash 75MHz SOIC-8 | Micron

M25P80-VMN3PB ✗ 停產

規格比較

參數 M25P16-VMN3PB M25P80-VMN3PB
品牌 Micron Technology Micron Technology
類別 Memory ICs EEPROM
生命週期狀態 停產終止 停產終止
記憶體類型 Serial NOR Flash, SLC FLASH - NOR Memory IC
Memory Density 16 Mbit (16,777,216 bits) —
組織 2 M x 8 (2,000,000 bytes x 8) 1M x 8 bit
介面 SPI SPI
最大時脈頻率 75 MHz 75 MHz
供應電壓 2.7 V to 3.6 V 2.7 V to 3.6 V
Write/Erase Endurance 100,000 cycles —
工作溫度 -40C to +125C [DATA_NEEDED: operating temperature range]
Temperature Grade Automotive —
封裝 8-SO (SOIC, 208 mil SOP) 8-SO (SOIC-8)
Number of Terminals 8 —
Maximum Seated Height 1.75 mm —
安裝類型 Surface Mount Surface Mount
Product Longevity Program Yes —
Access Time 15 ns 8 ns
Write Protection Hardware (WP#) and software block protection —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
記憶體容量 — 8 Mbit (1M x 8)
Page Program Time — 0.64 ms typ (up to 256 bytes)
Erase Capability — Sector erase and bulk erase
Write Protect — Hardware write protect (W pin)
Hold Function — Yes (HOLD pin)
Program/Erase Endurance — [DATA_NEEDED: program/erase endurance cycles]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價