M29W064FB70N3E vs M29W064FB70N3F 比較

詳細並排比較 M29W064FB70N3E 由 Micron Technology 與 M29W064FB70N3F 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29W064FB70N3E M29W064FB70N3E - 64Mbit 3V NOR Flash 70ns TSOP-48 | Micron

M29W064FB70N3E - 64Mbit 3V NOR Flash 70ns TSOP-48 | Micron

M29W064FB70N3E ✓ 啟用中
Micron Technology
M29W064FB70N3F M29W064FB70N3F - 64Mb NOR Flash 70ns AEC-Q100 | Micron Technology

M29W064FB70N3F - 64Mb NOR Flash 70ns AEC-Q100 | Micron Technology

M29W064FB70N3F Obsolete

規格比較

參數 M29W064FB70N3E M29W064FB70N3F
品牌 Micron Technology Micron Technology
類別 Flash Memory ICs
生命週期狀態 啟用中 Obsolete
記憶體類型 NOR Flash, Parallel NOR Flash, Parallel
記憶體容量 64 Mbit (8M x 8 / 4M x 16) —
供應電壓 3.0 V to 3.6 V (3V/3.3V) 2.7 V to 3.6 V
Access Time 70 ns 70 ns
介面 Parallel, CFI compliant Parallel, x8/x16 selectable (BYTE#)
Boot Block Bottom boot block (FB variant) —
封裝 48-Pin TSOP 48-TSOP
安裝類型 Surface Mount Surface Mount
工作溫度 -40C to +125C -40C to +125C
Organization Switching Byte/Word selectable via BYTE# pin —
Reset/Power-Down RP# pin —
Data Protection Block protection, WP# hardware protection —
Device Signature Electronic signature for device identification —
Packaging Tray Tape & Reel (TR suffix)
RoHS 狀態 Compliant Compliant (F suffix)
Brand Source Micron Technology / Alliance Memory, Inc. (second source) —
Erase/Program Mode Word/byte program, block erase, chip erase —
Density — 64 Mbit
組織 — 8M x8 / 4M x16
Boot Block Configuration — Bottom boot block (FB)
Automotive Qualification — AEC-Q100 qualified
Status Polling — RY/BY# hardware pin + data polling
Erase/Program Interface — Command set (M29W family compatible)
Part Status — Obsolete

資料表與資源

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