M29W400FB55N3E vs M29F400FT55N3E2 比較

詳細並排比較 M29W400FB55N3E 由 Micron Technology 與 M29F400FT55N3E2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29W400FB55N3E M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E ✓ 啟用中
Micron Technology
M29F400FT55N3E2 M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron

M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron

M29F400FT55N3E2 ✓ 啟用中

規格比較

參數 M29W400FB55N3E M29F400FT55N3E2
品牌 Micron Technology Micron Technology
類別 EEPROM Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash (parallel) NOR Flash (Parallel)
Density 4 Mbit (4194 kbits) 4 Mbit (512K x 8)
組織 512K x 8 bit / 256K x 16 bit —
Access Time 55 ns 55 ns
Supply Voltage (VCC) 2.7 V to 3.6 V —
介面 Parallel, 8-bit/16-bit (BYTE# selectable) Parallel
Block Architecture 19 memory blocks, 1 boot block (bottom, FB) —
Programming Time 10 us per byte/word typical —
Boot Block Hardware Protection Yes —
工作溫度 -40C to +125C [DATA_NEEDED: Operating Temperature Range]
封裝 48-TSOP I, 12 x 20 mm 44-SO (SOP-44)
Pins 48 —
安裝類型 Surface Mount Surface Mount
Packaging Tray —
RoHS 狀態 Compliant [DATA_NEEDED: RoHS Status]
Speed Grades in Family 55 ns, 70 ns —
供應電壓 — 5 V (single supply)
Boot Block Architecture — Top boot (FT variant)
Programming Supply — No 12 V VPP required (5.0 V programming)
Command Set — JEDEC standard compatible
Program/Erase Endurance — [DATA_NEEDED: Program/Erase Cycles]
Data Retention — [DATA_NEEDED: Data Retention]
Active Read Current — [DATA_NEEDED: Active Current]
Standby Current — [DATA_NEEDED: Standby Current]
Block Protection — Hardware block protection
MSL 等級 — [DATA_NEEDED: Moisture Sensitivity Level]

資料表與資源

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