M29W800FB70N3F vs M29W160FB70N3E 比較

詳細並排比較 M29W800FB70N3F 由 Micron Technology 與 M29W160FB70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29W800FB70N3F M29W800FB70N3F - 8Mb Parallel NOR Flash 70ns TSOP-48 | Micron

M29W800FB70N3F - 8Mb Parallel NOR Flash 70ns TSOP-48 | Micron

M29W800FB70N3F ✓ 啟用中
Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ 啟用中

規格比較

參數 M29W800FB70N3F M29W160FB70N3E
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
Density 8 Mbit —
組織 512K x 16 / 1M x 8 —
Access Time 70 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 3.0 V to 3.6 V
介面類型 Parallel —
記憶體類型 NOR Flash (Boot Block) FLASH - NOR
Boot Block Location Bottom —
Block Count 19 memory blocks (1 boot, 3 parameter, 15 main) —
Bus Width Selection x8 / x16 via BYTE# pin —
Programming Time 10 us per byte/word (typical) —
CFI Compliant Yes —
Erase Suspend/Resume Yes —
封裝 TSOP-48 (12 x 20 mm) —
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: operating temperature range]
RoHS 狀態 Compliant —
Packaging Tape & Reel Tray
記憶體容量 — 16 Mbit (2M x8 / 1M x16)
介面 — Parallel
Programming Voltage — Single supply (no separate VPP required)
Bus Configuration — x8 / x16 selectable (BYTE# pin)
Architecture — Boot block
封裝 / 外殼 — 48-TFSOP (0.724 in, 18.40 mm width)
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: data retention]
Status Output — Data polling / toggle bit
Block Protection — Yes (boot block protection)

資料表與資源

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