MPX5010GSX vs MPX5010DP 比較

詳細並排比較 MPX5010GSX 由 NXP Semiconductors 與 MPX5010DP 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MPX5010GSX MPX5010GSX - 10kPa Integrated Pressure Sensor 6-SIP | NXP

MPX5010GSX - 10kPa Integrated Pressure Sensor 6-SIP | NXP

MPX5010GSX ✓ 啟用中
NXP Semiconductors
MPX5010DP MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP ✓ 啟用中

規格比較

參數 MPX5010GSX MPX5010DP
品牌 NXP Semiconductors NXP Semiconductors
類別 Pressure Sensors Pressure Sensors
生命週期狀態 啟用中 啟用中
Pressure Type Vented Gauge Differential
Operating Pressure Range 0 kPa to 10 kPa (0 to 1.45 PSI) 0 kPa to 10 kPa (0 to 1.45 PSI)
Maximum Overload Pressure [DATA_NEEDED: maximum overload pressure] [DATA_NEEDED: max overload kPa]
輸出類型 Analog Voltage Analog, ratiometric
Output Voltage Span 0.2 V to 4.7 V —
Supply Voltage (VCC) 4.5 V to 5.5 V —
供應電流 [DATA_NEEDED: supply current typical] [DATA_NEEDED: supply current mA]
Accuracy 1.0 % typical (per datasheet) —
Response Time [DATA_NEEDED: response time] —
工作溫度 0 C to 85 C 0 C to +85 C (compensated)
Port Size Male 0.19 inch (4.93 mm) Tube, Side Port —
封裝 / 外殼 6-SIP Module (Case 867F) —
Termination Style Through-Hole PCB —
安裝類型 Through Hole Through-hole (SIP)
RoHS 狀態 Compliant Compliant
Media Compatibility Dry gases (air, non-corrosive) —
Technology Piezoresistive MEMS with on-chip ASIC Piezoresistive, monolithic silicon, on-chip signal conditioned
Sensitivity — 450 mV/kPa (typical)
輸出電壓範圍 — 0.2 V to 4.7 V
供應電壓 — 4.75 V to 5.25 V (5 V typical)
Linearity — ±1.5% VFSS (typical, 0-85 C)
Storage Temperature — [DATA_NEEDED: storage temperature C]
Port Configuration — Dual axial ports, 4.93 mm (0.19 in) tube
封裝 — 6-SIP Module

資料表與資源

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