MRF5S21130HSR5 vs MRF5S21100HSR5 比較

詳細並排比較 MRF5S21130HSR5 由 NXP Semiconductors 與 MRF5S21100HSR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF5S21130HSR5 MRF5S21130HSR5 - 28W RF LDMOS 2.11-2.17GHz NI-880S | NXP

MRF5S21130HSR5 - 28W RF LDMOS 2.11-2.17GHz NI-880S | NXP

MRF5S21130HSR5 Obsolete
NXP Semiconductors
MRF5S21100HSR5 MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP

MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP

MRF5S21100HSR5 ✓ 啟用中

規格比較

參數 MRF5S21130HSR5 MRF5S21100HSR5
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 Obsolete 啟用中
Manufacturer NXP Semiconductors (formerly Freescale, Motorola) NXP Semiconductors (formerly Freescale Semiconductor)
Part Number MRF5S21130HSR5 —
電晶體類型 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel RF Power MOSFET
Series RF MOSFET Line / HV5 —
Operating Frequency 2.11 GHz to 2.17 GHz 2.16 GHz to 2.17 GHz
Test Voltage (Vdd) 28 V —
Test Current (Idq) 1.2 A —
Power Output (Pout) 28 W (CW) —
Power Gain 13.5 dB (typical) 13.5 dB (typical)
Drain-Source Voltage (Vdss Rated) 65 V —
封裝 / 外殼 NI-880S ceramic NI-780S (ceramic flange-mount)
安裝類型 Surface Mount (SMT) with ceramic body Chassis / Flange Mount (through-hole RF)
Application W-CDMA base station, TDMA/CDMA, multi-carrier amplifier —
Status Obsolete (last-time-buy windows closed at authorized distributors) —
Tape and Reel Pack R5 suffix = 500-piece reel —
Orderable Lead-Free Status [DATA_NEEDED: lead-free status from NXP PCN] —
Part Status — Active
Technology — LDMOS (Laterally Diffused MOS)
Drain-to-Source Voltage (Vdss) Max — 65 V
Test Supply Voltage — 28 V
Output Power (Pout) — 23 W (CW)
Drain Current (Id) — 1.05 A
工作溫度範圍 — -40C to +150C (junction)
RoHS 狀態 — [DATA_NEEDED: RoHS status from NXP product page]
Lead-Free — [DATA_NEEDED: lead-free finish]

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