MRF6P9220HR3 vs MRF6P9220HR5 比較
詳細並排比較 MRF6P9220HR3 由 NXP Semiconductors 與 MRF6P9220HR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors
MRF6P9220HR5 ✓ 啟用中規格比較
| 參數 | MRF6P9220HR3 | MRF6P9220HR5 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRF6P9220HR3 | — |
| 電晶體類型 | N-Channel Lateral MOSFET (RF Power) | N-Channel RF Power MOSFET |
| Technology | LDMOS, enhancement-mode | LDMOS (Laterally Diffused MOS) |
| Drain-Source Voltage (VDS) | 28 V typical | — |
| Test Frequency | 880 MHz | — |
| Typical Output Power (Pout) | 47 W (average, N-CDMA) | — |
| Power Gain (Gp) | 20 dB typical | — |
| Drain Current at Test (ID) | [DATA_NEEDED: drain current at Pout test] | — |
| Quiescent Bias Current (IDQ) | 1.6 A typical | — |
| Drain Efficiency | [DATA_NEEDED: efficiency at test] | — |
| Operating Frequency Range | Up to 1000 MHz (broadband, up to ~1 GHz typical) | — |
| 封裝 | NI-860C3 (ceramic, flange-mount) | — |
| Configuration | Common-source, single-ended | Single, Flanged |
| 安裝類型 | Surface/chassis mount (flange to heatsink) | Through-Hole / Bolt-Down |
| Application | Base-station PA, N-CDMA, industrial RF | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Operating Mode | Enhancement mode | — |
| Drain-Source Voltage (Vdss) | — | 68 V |
| Continuous Drain Current (Id) | — | 1.6 A |
| Typical Operating Voltage | — | 28 V |
| Operating Frequency | — | 880 MHz |
| Output Power (Pout) | — | 47 W (CW) |
| Power Gain (Gps) | — | 20 dB |
| 封裝 / 外殼 | — | NI-860C3 (5-pin ceramic, flange mount) |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |
| 工作溫度 | — | -40C to +150C (TJ) |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| Polarization | — | N-Channel |