MRF6P9220HR5 vs MRF6P9220HR3 比較

詳細並排比較 MRF6P9220HR5 由 NXP Semiconductors 與 MRF6P9220HR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF6P9220HR5 MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors

MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors

MRF6P9220HR5 ✓ 啟用中
NXP Semiconductors
MRF6P9220HR3 MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 ✓ 啟用中

規格比較

參數 MRF6P9220HR5 MRF6P9220HR3
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel RF Power MOSFET N-Channel Lateral MOSFET (RF Power)
Technology LDMOS (Laterally Diffused MOS) LDMOS, enhancement-mode
Drain-Source Voltage (Vdss) 68 V —
Continuous Drain Current (Id) 1.6 A —
Typical Operating Voltage 28 V —
Operating Frequency 880 MHz —
Output Power (Pout) 47 W (CW) —
Power Gain (Gps) 20 dB —
封裝 / 外殼 NI-860C3 (5-pin ceramic, flange mount) —
安裝類型 Through-Hole / Bolt-Down Surface/chassis mount (flange to heatsink)
Configuration Single, Flanged Common-source, single-ended
MSL 等級 [DATA_NEEDED: MSL level] —
工作溫度 -40C to +150C (TJ) —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Lead-Free [DATA_NEEDED: lead-free status] —
Polarization N-Channel —
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Number — MRF6P9220HR3
Drain-Source Voltage (VDS) — 28 V typical
Test Frequency — 880 MHz
Typical Output Power (Pout) — 47 W (average, N-CDMA)
Power Gain (Gp) — 20 dB typical
Drain Current at Test (ID) — [DATA_NEEDED: drain current at Pout test]
Quiescent Bias Current (IDQ) — 1.6 A typical
Drain Efficiency — [DATA_NEEDED: efficiency at test]
Operating Frequency Range — Up to 1000 MHz (broadband, up to ~1 GHz typical)
封裝 — NI-860C3 (ceramic, flange-mount)
Application — Base-station PA, N-CDMA, industrial RF
Operating Mode — Enhancement mode

資料表與資源

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