MRF6S23140HR3 vs MRF6S27050HR5 比較

詳細並排比較 MRF6S23140HR3 由 NXP Semiconductors 與 MRF6S27050HR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF6S23140HR3 MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 ✓ 啟用中
NXP Semiconductors
MRF6S27050HR5 MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP

MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP

MRF6S27050HR5 Obsolete

規格比較

參數 MRF6S23140HR3 MRF6S27050HR5
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 Obsolete
電晶體類型 LDMOS, N-Channel Enhancement-Mode LDMOS, N-Channel, RF Power
Technology Lateral N-Channel RF Power MOSFET —
Drain-Source Voltage (Rated) 68 V —
Operating Drain Voltage (Typical) 28 V —
Test Quiescent Drain Current 1.3 A —
Operating Frequency Range 2300 MHz to 2400 MHz —
Test Frequency 2.39 GHz —
Output Power (Average, 2 x W-CDMA) 28 W —
Power Gain 15.2 dB —
Drain Efficiency [DATA_NEEDED: drain efficiency %] —
封裝 / 外殼 NI-880H-2L (CASE 465B-03, STYLE 1) NI-780H-2L
安裝類型 Chassis / Flange Mount Chassis Mount / Screw Flange
Configuration Single, push-pull capable —
Input Matching Internally matched (per datasheet) —
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
Lead-Free [DATA_NEEDED: lead-free status] —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Part Status — Obsolete
Frequency — 2.62 GHz (operating band)
Test Voltage (Vds) — 28 V
Current Rating — [DATA_NEEDED: continuous/maximum drain current]
Test Current — 500 mA
Power Gain (Gps) — 16 dB (typical at 2.62 GHz)
Power Output — 7 W
Voltage - Rated (Vds max) — 68 V
Supplier Device Package — NI-780
工作溫度 — [DATA_NEEDED: operating temperature range]
MSL 等級 — Not applicable (non-surface-mount ceramic package)
Primary Application — WCDMA / UMTS base-station PA driver and final stage

資料表與資源

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